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| Eudyna GaN-HEMT 90W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 50.0dBm (typ.) @ P3dB High Efficiency: 50%(typ.) @ P3dB Linear Gain : 12.0dB(typ.) @ f=3.5GHz Proven Reliability ES/EGN35A090IV High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition Tc=25oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature r P Symbol VDS IGF IGR Tch im l e Condition RG=5 RG=5 Vp VGDO P3dB d GL Rth a in Rating Limit 50 120 -5 150 -65 to +175 250 ry Unit V V W oC oC Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3dB Gain Compression Power Drain Efficiency Linear Gain Thermal Resistance VDS=50V IDS=36mA IGS=- 18mA VDS=50V IDS(DC)=500mA f=3.5GHz Channel to Case TBD -1.0 TBD Limit Typ. Max. -2.0 -350 50.0 50 12.0 1.3 -3.5 1.5 Unit V V dBm % dB oC/W Edition 1.2 Dec. 2005 1 ES/EGN35A090IV High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V IDS(DC)=500mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=500mA f=3.5GHz 53 51 49 Output Power [dBm] 53 51 49 Output Power [dBm] 47 45 43 41 39 37 35 33 100 90 80 70 60 50 Drain Effciency [%] 47 45 43 41 39 37 35 33 3.35 3.40 3.45 3.50 3.55 3.60 3.65 Frequency [GHz] Pin=26dBm Pin=38dBm Pin=30dBm Pin=42dBm r P Total Power Dissipasion [W] im l e Pin=34dBm a in ry Input Power [dBm] 40 30 20 10 0 23 25 27 29 31 33 35 37 39 41 43 Power Derating Curve 160 140 120 100 80 60 40 20 0 0 50 100 150 200 o 250 300 Case Temperature [ C] Edition 1.2 Dec. 2005 2 ES/EGN35A090IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=500mA, f=2 to 5 GHz, Zl = Zs = 50 ohm Freq [GHz] 2.0 +50j 2.1 +100j 10 2.2 +25j 2.3 25 2.4 50 2.5 +250j +10j 2.6 2.7 3.5GHz 2.8 0 2.9 3.5GHz 3.0 3.1 3.2 -250j -10j 3.3 3.4 3.5 S11 -25j -100j 3.6 S22 -50j 3.7 3.8 3.9 4.0 4.1 +90 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 3.5GHz 180 6 0 5.0 r P 3.5GHz im l e S12 S21 ry a in S11 MAG ANG 0.540 58.0 0.419 7.6 0.443 -51.6 0.556 -92.3 0.660 -116.9 0.728 -133.8 0.770 -146.3 0.787 -156.7 0.782 -165.3 0.760 -172.7 0.733 -179.2 0.696 174.7 0.646 168.6 0.579 163.3 0.495 160.3 0.418 162.6 0.382 170.7 0.409 178.5 0.465 179.1 0.522 174.4 0.560 166.6 0.580 156.8 0.583 145.6 0.570 133.0 0.555 116.9 0.559 94.4 0.565 61.6 0.575 21.7 0.618 -16.3 0.680 -47.7 0.742 -71.3 S21 MAG ANG 2.377 -106.7 2.834 -130.6 3.156 -155.6 3.342 -179.7 3.522 158.1 3.772 135.7 4.084 111.4 4.332 84.0 4.192 55.2 3.786 28.8 3.372 6.5 3.044 -13.0 2.860 -31.2 2.747 -49.7 2.680 -69.0 2.632 -89.6 2.539 -110.9 2.408 -131.3 2.257 -151.2 2.148 -169.1 2.117 172.9 2.160 155.2 2.299 135.5 2.553 112.7 2.880 83.9 3.057 46.7 2.690 5.0 1.978 -32.6 1.339 -63.0 0.890 -86.8 0.610 -106.0 S12 MAG ANG 0.003 -107.5 0.003 -131.0 0.004 -150.9 0.005 -176.5 0.006 164.9 0.007 141.5 0.009 124.5 0.010 102.0 0.011 77.3 0.010 59.6 0.010 42.1 0.009 32.9 0.009 21.8 0.009 8.9 0.010 -6.7 0.011 -23.4 0.011 -44.0 0.012 -65.8 0.012 -82.6 0.013 -97.9 0.014 -113.2 0.017 -127.9 0.021 -144.7 0.028 -166.5 0.038 167.5 0.046 133.3 0.046 96.9 0.039 66.4 0.030 44.4 0.021 28.4 0.017 23.1 S22 MAG ANG 0.906 161.6 0.893 157.9 0.869 153.7 0.833 147.9 0.767 139.9 0.663 129.8 0.479 116.8 0.205 105.7 0.134 -130.9 0.394 -134.4 0.570 -146.3 0.677 -155.9 0.745 -163.6 0.788 -170.7 0.819 -176.8 0.847 177.2 0.860 171.4 0.866 165.0 0.857 158.3 0.843 151.7 0.829 143.9 0.796 133.6 0.749 121.0 0.668 101.2 0.538 68.1 0.424 5.4 0.510 -69.3 0.663 -113.4 0.752 -137.9 0.798 -153.4 0.829 -163.2 Scale for |S21| 0.6 Scale for |S 12| -90 Edition 1.2 Dec. 2005 3 ES/EGN35A090IV High Voltage - High Power GaN-HEMT IV Package Outline Metal-Ceramic Hermetic Package r P im l e ry a in PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 4 |
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